Berlin 2012 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 86: Semiconductor Lasers

HL 86.8: Talk

Thursday, March 29, 2012, 17:00–17:15, EW 015

Exceeding 100 mW UV laser emission around 330 nm via intracavity frequency doubling of a tunable red AlGaInP-VECSEL — •Hermann Kahle, Thomas Schwarzbäck, Michael Jetter, and Peter Michler — Institut für Halbleiteroptik und Funktionelle Grenzflächen and Research Center SCoPE, Universität Stuttgart, Allmandring 3, 70569 Stuttgart, Germany

The wide range of applications in biophotonics, television technologies, spectroscopy and lithography made the vertical external cavity surface-emitting laser (VECSEL) an important category of power scalable lasers. The possibility of bandgap engineering, inserting frequency selective and converting elements into the open laser cavity and laser emission in the fundamental Gaussian mode leads to ongoing growth of the area of applications for VECSELs. We present an intra cavity frequency doubled VECSEL with emission wavelength around 330 nm, a maximum tuning range of more than 7 nm and output powers exceeding 100 mW. Frequency doubling is realized with a beta barium borate crystal, while a birefringent filter, placed inside the laser cavity under Brewster’s angle, is used for frequency tuning. The laser-chip is realized by a 55 λ/4 pairs Al_0.50Ga_0.50As/AlAs Bragg mirror on a GaAs substrate, followed by a n-λ cavity multi quantum well structure consisting of 20 compressively strained GaInP quantum wells in an Al_xGa_1−xInP separate confinement heterostructure for an emission wavelength of around 660 nm. We show results of different arrangements of the quantum wells and investigate further innovative approaches for the active region.