Berlin 2012 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 88: Quantum Dots and Wires: Transport Properties IV (mainly Double Dots and Point Contacts)

HL 88.1: Talk

Thursday, March 29, 2012, 16:30–16:45, EW 202

A hybrid double-dot in silicon — •Miguel Fernando Gonzalez Zalba, Dominik Heiss, and Andrew Ferguson — Microelectronics Research Centre, Cavendish Laboratory, Cambridge, CB3 0HE, UK

We report electrical measurements of a single arsenic dopant atom in the tunnel-barrier of a silicon Single Electron Transistor (SET). As well as performing electrical characterization of the individual dopant, we study series electrical transport through the dopant and SET. We measure the triple points of this hybrid double dot system, using simulations to support our results, and show that we can tune the electrostatic coupling between the two sub-systems.