Berlin 2012 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 91: Poster Session: Spintronics / Magnetic Semiconductors / Transport
HL 91.11: Poster
Thursday, March 29, 2012, 16:00–19:00, Poster D
Antiferromagnetic semiconductors of I-Mn-As type — •Stepan Svoboda1, Vit Novak1, Miroslav Cukr1, Zbynek Soban1, Helena Reichlova1, Xavier Marti1, Peter Wadley1,2, Richard Campion2, and Tomas Jungwirth1,2 — 1Institute of Physics AS CR, Prague, Czech Republic — 2School of Physics and Astronomy, University of Nottingham, UK
Antiferromagnetic materials offer an alternative to ferromagnetic or multiferroic materials utilized so far in spintronic applications [1]. Compounds of the I-Mn-V family have been theoretically predicted to exhibit simultaneously semiconductance and room-temperature antiferromagnetism which makes them particularly appealing for spintronics. Although some of these compounds were chemically synthesized already thirty years ago, there has been virtually no experimental data on their electronic properties, mainly due to the limited quality of the material. Here we report on investigation of structural, electronic and magnetic properties of LiMnAs and CuMnAs. Both materials have been prepared in form of high-quality monocrystalline thin films by molecular beam epitaxy. Crystal structure of LiMnAs grown on InAs corresponds to that of the known cubic bulk material. Crystal structure of CuMnAs grown on GaAs substrate shows tetragonal symmetry with lattice parameters consistent with the strained bulk material.
[1] B.-G. Park et al., Nature Materials 10, 347-351 (2011)