Berlin 2012 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 91: Poster Session: Spintronics / Magnetic Semiconductors / Transport
HL 91.3: Poster
Donnerstag, 29. März 2012, 16:00–19:00, Poster D
Temperature dependence of the spin relaxation length in spin quantum dot LEDs — •Carola Fritsche1, Henning Höpfner1, Arne Ludwig2, Astrid Ebbing2, Frank Stromberg3, Heiko Wende3, Werner Keune3, Dirk Reuter2, Andreas D. Wieck2, Nils C. Gerhardt1, and Martin R. Hofmann1 — 1Photonics and Terahertz Technology, Ruhr-University Bochum, Germany — 2Applied Solid State Physics, Ruhr-University Bochum, Germany — 3Faculty of Physics and Center for Nanointegration Duisburg-Essen, University of Duisburg-Essen, Germany
Over the last two decades remarkable progress has been seen in the field of spintronics and spin-optoelectronics in particular. Spin injection into spin light-emitting diodes (LEDs) using ferromagnetic contacts has greatly improved, resulting in higher polarization of the emitted light.
Here we present an investigation of the spin relaxation length in actual spin-LED devices. Our devices consist of self-assembled InAs quantum dots in the active region and a Fe/Tb multilayer spin injector with a MgO tunnel barrier for improved injection efficiency. Operation of our devices in magnetic remanence enables measurements without the influence of external magnetic fields (Appl. Phys. Lett. 99 (5), 051102 (2011)).
Although our devices implement spin injection both in magnetic remanence and at room temperature, we performed a systematic study of the spin relaxation length as a function of device temperature. Additionally, we study the homogeneity of our samples and influences of diode current on spin polarization.