Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 91: Poster Session: Spintronics / Magnetic Semiconductors / Transport

HL 91.8: Poster

Donnerstag, 29. März 2012, 16:00–19:00, Poster D

Effects of low temperature annealing on the magnetic properties of (Ga,Mn)As/GaAs core-shell nanowires — •Alexander Eckrot¹, Christian Butschkow¹, Elisabeth Reiger¹, Andreas Rudolph¹, Dieter Schuh¹, Werner Wegscheider², and Dieter Weiss¹ — ¹Universität Regensburg, Germany — ²ETH Zürich, Switzerland

We investigate the effect of low temperature annealing on the magnetic properties of GaAs/(Ga,Mn)As core-shell nanowires. The nanowires are grown via the vapor-liquid-solid (VLS) mechanism with gold as catalyst and molecular beam epitaxy (MBE). Depending on the growth parameters we achieve either wurtzite or zinc-blende core-nanowires. When the (Ga,Mn)As shell is grown axially on the side facettes of the nanowires at low temperatures it adopts the crystal structure of the core. The nanowires are contacted electrically using E-beam lithography (EBL) in order to monitor the resistance during the annealing process. The Curie-Temperature (T_C) and the magnetic anisotropies are determined by magnetotransport measurements. For annealing temperatures between 160^∘C and 230^∘C and an annealing duration of up to 350 hours we observe a resistance decrease of up to 20%. The annealing procedure can affect significantly the magnetic hysteresis of a single nanowire.