Berlin 2012 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 92: Poster Session: II-VI Semiconductors & ZnO and related Materials

HL 92.15: Poster

Thursday, March 29, 2012, 16:00–19:00, Poster D

ZnO-based planar and nanowire heterostructures emitting in the visible spectral range — •Martin Lange, Christof P. Dietrich, Michael Lorenz und Marius Grundmann — Universität Leipzig, Institut für Experimentelle Physik II, Linnéstr. 5, D-04103 Leipzig, Germany

The rising complexity and efficiency of optoelectronic devices is based on heterostructures and therefore band gap engineering is essential. A reduction of the ZnO bandgap is possible when Cd is incorporated [1] whereas a larger bandgap is obtained for MgZnO. By applying a low substrate temperature of ≈ 300^∘C the ZnCdO related luminescence can be tuned down to energies of 2.5 eV for samples grown by puled-laser deposition [2].

By combining ZnCdO with ZnO or MgZnO the fabrication of quantum well (QW) heterostructures is possible. In such structures the QW-related emission energy can be tuned between the ZnCdO and the ZnO or MgZnO emission energy, by changing the QW-thickness only. For ZnCdO/MgZnO heterostructures the accessible spectral range is larger due to the larger bandgap in comparison to ZnO. An additional advantage is a reduced lattice mismatch for this combination due to an increasing a-lattice constant with increasing Cd/Mg-content for both alloys. In this regard, ZnCdO/ZnO and ZnCdO/MgZnO planar and nanowire heterostructures were fabricated. We report on the study of their luminescence properties.

[1] S. Sadofev et al., Appl. Phys. Lett. 89, 201907 (2010)

[2] M. Lange et al., Phys. Status Solidi RRL, 10.1002/pssr.201105489