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HL: Fachverband Halbleiterphysik
HL 92: Poster Session: II-VI Semiconductors & ZnO and related Materials
HL 92.20: Poster
Thursday, March 29, 2012, 16:00–19:00, Poster D
The 3.06 eV-Donor-Acceptor-Pair Recombination in homoepitaxial grown ammonia doped ZnO — •Melanie Pinnisch1, Sebastian Eisermann1, Markus R. Wagner2, Christian Nenstiel2, Matthew Phillips2, Detlev M. Hofmann1, and Bruno K. Meyer1 — 1I. Physikalisches Institut, Justus-Liebig-Universität Giessen, Heinrich-Buff-Ring 16, D-35392 Giessen — 2UT Sidney, Institute for Nanoscale Technology, PO Box 123, Broadway NSW 2007, Australia
In ammonia doped ZnO films grown, between sample temperatures of 350 ∘C and 400 ∘C, by chemical vapour deposition (CVD), two donor-acceptor-pair recombinations (DAP) were observed in steady state photoluminescence (PL) experiments. One is the well known DAP-band with its zero-phonon-line (ZPL) at 3.24 eV [1], and additionally a second DAP-band with the ZPL-position at 3.03 eV. This DAP-band shows a similar LO-phonon coupling (Huang-Rhys factor) as the 3.24 eV DAP-band, but its intensity decreases much faster with increasing measurement-temperature. A deep PL-band at 3.03 eV was only detected in films grown on non-polar substrates, and is absence in samples grown on c-plane ZnO-substrates. Cathodoluminescence (CL) and Raman experiments were performed to get more insight in the complex recombination behaviour of the samples.
[1] S. Lautenschlaeger et al., PSS B, 1-5 (2011)