Berlin 2012 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 92: Poster Session: II-VI Semiconductors & ZnO and related Materials

HL 92.21: Poster

Thursday, March 29, 2012, 16:00–19:00, Poster D

Characterization and fabrication of ZnO/GaN heterostructures — •Julian Benz, Achim Kronenberger, Sebastian Eisermann, Stefan Lautenschläger, Torsten Henning, Bruno K. Meyer, and Peter J. Klar — I. Physikalisches Institut, Justus-Liebig-Universität, Heinrich-Buff-Ring 16, 35392 Gießen

Zinc oxide (ZnO) is a n-type semiconductor with a wide direct band gap of 3.37 eV. The abundance of the resources zinc and oxygen make it a promising candidate for the development of sustainable optoelectronic devices in the UV spectral range. A reproducible way of p-type doping ZnO has not been reported yet. A possible approach is to replace the p-ZnO by p-GaN. We report on the fabrication of ZnO/GaN heterostructures. Thin films of ZnO can be prepared by several methods, such as sputter deposition and chemical vapor deposition. Electrical and optical characteristics of samples prepared by those methods are compared.