Berlin 2012 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 92: Poster Session: II-VI Semiconductors & ZnO and related Materials

HL 92.23: Poster

Donnerstag, 29. März 2012, 16:00–19:00, Poster D

two unique photoluminescence emissions in vapor phase grown ZnO single crystals — •xi zhang, frank herklotz, and jörg weber — Institut für Angewandte Physik, Technische Universität Dresden, 01062, Dresden, Germany

Defects play a crucial role in the optical and electrical properties of wide bandgap semiconductor ZnO. We detect two unidentified defects with low temperature photoluminescence lines at 3.3643 eV (P1) and 3.3462 eV (P2) in vapor phase grown ZnO single crystals [1]. The P1 line is observed in the as-grown samples. From the position of the associated two-electron-satellite, P1 is attributed to the recombination of an exciton bound to a shallow donor with a donor binding energy of 42.2 meV. Hydrogenation of the sample by annealing in hydrogen atmosphere at 700 oC leads to the appearance of the P2 line and a reduction of the P1 line. The results of isochronal annealing series suggest a correlation between P2 and the interstitial hydrogen donor HBC, which exhibits an excitonic recombination at 3.3601 eV. The possible microscopic origins of the P1 line and P2 line will be discussed. This work was supported by the European Regional Development Fund and the Free State of Saxony. SAB project 14253/2423

[1] X. Zhang, F. Herklotz, E. Hieckmann, J. Weber, P. Schmidt, J. Vac. Sci. Technol. A 29, 03A107 (2011)