Berlin 2012 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 92: Poster Session: II-VI Semiconductors & ZnO and related Materials

HL 92.25: Poster

Thursday, March 29, 2012, 16:00–19:00, Poster D

Dependence of impurity incorporation on the surface termination of ZnO — •Alba Seibert¹, Andreas Laufer¹, Niklas Volbers¹, Sebastian Eisermann¹, Kay Potzger², Sebastian Geburt³, Carsten Ronning³, and Bruno K. Meyer¹ — ¹1. Physikalisches Institut, Justus-Liebig-Universität Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, Germany — ²Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01328 Dresden, Germany — ³Institut für Festkörperphysik, Universität Jena, Max-Wien-Platz 1, 07743 Jena, Germany

Zinc oxide (ZnO) is regarded as a promising material for optoelectronic devices, due to its electronic properties. The severe difficulties in obtaining p-type ZnO have been partially attributed to intrinsic defects and impurities that act as compensating donors. To avoid these effects, the identification and quantification of impurities is a major demand. For quantitative information using secondary ion mass spectrometry (SIMS), so-called relative sensitivity factors (RSF) are essential. We present the determined RSF values for ZnO using primary (ion implanted) as well as secondary (bulk doped) standards. These RSFs have been applied to commercially available ZnO substrates of different surface termination (a-plane, Zn-face, and O-face) to quantify the contained impurities. Although these ZnO substrates originate from the same single-crystal, we observe discrepancies in the impurity concentrations. These results cannot be attributed to surface termination dependent RSF values for ZnO.