Berlin 2012 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 92: Poster Session: II-VI Semiconductors & ZnO and related Materials
HL 92.27: Poster
Donnerstag, 29. März 2012, 16:00–19:00, Poster D
Analysis of nitrogen doped ZnO via SIMS — •André Portz, Andreas Laufer, Michael Hofmann, Stefan Lautenschläger, Sebastian Eisermann, and Bruno K. Meyer — 1. Physikalisches Institut, Justus-Liebig-Universität Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, Germany
During the last years the II-VI compound semiconductor zinc oxide (ZnO) has experienced a renaissance due to its interesting characteristics such as resistivity against high energy radiation, its transparency for visible light or also the possibility to achieve high crystal quality in epitaxial growth. But even more interesting seems the effort to accomplish reproducable p-conductivity by appropriate doping with group V-elements replacing oxygen in the crystal and creating the requested acceptor-level. This would form the foundation for numerous new applications in semiconductor-technology like efficient LEDs in the blue and ultraviolet spectral range. In the presented work nitrogen-doped zinc oxide (ZnO:N) was analysed using secondary ion mass spectrometry. Two series of samples were investigated. Both were homoepitaxially grown using CVD. In the first case the influx of NH3, acting as nitrogen source, was varied. In the second case the substrate temperature was changed. The resulting nitrogen concentrations were determined and consequences are discussed.