Berlin 2012 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 93: Poster Session: Metal-Semiconductor Hybrid Systems, Plasmonic Systems / Photonic Crystals / Carbon: Diamond & CNT / Quantum Information Systems
HL 93.17: Poster
Thursday, March 29, 2012, 16:00–19:00, Poster D
Distribution of NV optical centers in nitrogen-implanted diamond: Effects of radiation-induced defects and the surface potential — •Torsten Rendler1, Andrej Denisenko1, Jan Meijer2, and Joerg Wrachtrup1 — 13rd Physics Instiute and Research Center SCoPE, University of Stuttgart, Germany — 2RUBION, Ruhr-Unveristaet Bochum, Germany
In this contribution we present the results on vertical distribution of nitrogen-vacancy (NV) centers in diamond, evaluated using step-etching in Ar/O2 plasma and confocal microscopy analysis. A nitrogen-free single crystal diamond was co-implanted by 15N and 12C atoms and subjected to thermal annealing in high vacuum to activate the NV defects.It was revealed that the optical centers are distributed in depth with different conversion rates of nitrogen atoms to NV defects (yield): about 10% within the stopping range of the implanted atoms and below 0.1% within the channeling tail at the implantation at 0° tilt. The concentration of electrically active defects (traps) within the implanted region was estimated by changing the surface potential of the initially O-terminated diamond in a microwave hydrogen-plasma. It was concluded that the thickness of the sub-surface region depleted with NV- was limited by charged defects in the bandgap of diamond. Subsequent wet-chemical oxidation of the H-terminated surface increased the contribution of NV- centers within the evaluated profile, consistent with the model of surface band bending and charged defects in the implanted region.