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HL: Fachverband Halbleiterphysik

HL 93: Poster Session: Metal-Semiconductor Hybrid Systems, Plasmonic Systems / Photonic Crystals / Carbon: Diamond & CNT / Quantum Information Systems

HL 93.19: Poster

Donnerstag, 29. März 2012, 16:00–19:00, Poster D

Growth of carbon nanotubes for transistor applications — •Michael Trefz, Kerstin Schneider, Ronny Löffler, Monika Fleischer, and Dieter Kern — Institute for Applied Physics, University of Tübingen, Auf der Morgenstelle 10, 72076 Tübingen, Germany

Carbon nanotube field effect transistors (CNTFETs), that utilize a single carbon nanotube (CNT) as the channel material instead of bulk silicon in the traditional metal-insulator-semiconductor field effect transistor (MOSFET) structure could play a decisive role in the continuing path of miniaturization of electronic devices. In particular the possible narrow channels and the high electrical conductivity of the CNTs are attractive features. However, besides low resistance contacting issues the targeted and reliable preparation of individual transistors still presents problems. Control over the position of a nanotube has been achieved via positioning of catalyst material by lithographic means, followed by chemical vapour deposition (CVD) growth from this catalyst island. The orientation of the growing CNTs may be controlled by an electric field generated by a voltage applied between micro electrodes underneath the catalyst island. Strong van der Waals interaction with the surface impedes this orientation. We present a method to increase the yield of the oriented CNTs by applying an additional electric field so that a contact of the CNTs with the substrate during the growth is avoided. Results from growth experiments and electrical characterization of completed CNTFETs will be presented.