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HL: Fachverband Halbleiterphysik

HL 93: Poster Session: Metal-Semiconductor Hybrid Systems, Plasmonic Systems / Photonic Crystals / Carbon: Diamond & CNT / Quantum Information Systems

HL 93.21: Poster

Donnerstag, 29. März 2012, 16:00–19:00, Poster D

Er-ion implantation in Si-based materials — •Nadezhda Kukharchyk¹, Stepan Shvarkov¹, Pavel Bushev², Alexey Ustinov², and Andreas D. Wieck¹ — ¹Angewandte Festkoerperphysik, Ruhr-Universitaet Bochum, Deutschland — ²Physikalisches Institut, Karlsruhe Institut fuer Technologie, Deutschland

Erbium, embedded in a solid state matrix, is one of the most promising elements for future quantum information processing. The crystal structure as well as its magnetic impurities plays a quite important role for the magnetic properties of Er-ions. As silicon-based materials proved to be the base of the modern electronics world, they are also of high interest for future implementation in quantum data processing. In the following work, the behaviour of implanted Er species in Si-containing materials is discussed. Czochralski Si, float-zone Si, SiO2 and Y2SiO5 are taken as possible matrix (substrate materials). The electron parametric resonance study of implanted Er3+ ions is presented and discussed.