Berlin 2012 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 94: Invited Talk: Martin Eickhoff

HL 94.1: Topical Talk

Friday, March 30, 2012, 09:30–10:00, ER 270

Group III-Nitride nanowires and nanowire heterostructures: growth, properties and application as optochemical nanosensors — Jörg Teubert¹, Pascal Becker¹, Jens Wallys¹, Florian Furtmayr^1,2, Lorenzo Rigutti³, Jordi Arbiol⁴, and •Martin Eickhoff¹ — ¹I. Physikalisches Institut, Justus-Liebig-Universität Giessen — ²Walter Schottky Institut, Technische Universität München — ³Institut d'Electronique Fondamentale, University of Paris Sud XI, UMR 8622 CNRS, Orsay, France — ⁴Institució Catalana de Recerca i Estudis Avançats (ICREA), Barcelona, CAT, Spain

Group III-nitride (III-N) nanostructures, such as quantum dots, nanowires (NWs) and nanowire heterostructures (NWHs) are a current topic of intense research. Part of these activities is motivated by the possibility of realizing novel, nanoscaled optoelectronic devices with improved stability and efficiency or the perspective of realizing novel optochemical nanosensors.

We review the growth and structural properties of III-N NWs and NWHs and discuss the relation of their structural characteristics and optical properties. Here, GaN nanodiscs embedded in AlGaN/GaN NWs present an ideal model system to study the influence of confinement, internal electric fields and mechanical strain gradients.

We also discuss the photoluminescence response of III-N NWs and NWHs upon exposure to oxidizing and reducing gases as well as the photoelectrochemical properties of III-N nanostructures in electrolyte solutions.