Berlin 2012 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 95: Quantum Dots and Wires: Optical Properties III (mainly Cavities and Ultrafast Response)

HL 95.4: Talk

Friday, March 30, 2012, 10:15–10:30, EW 201

Optimization of InGaN quantum dots for single line emission at elevated temperatures — •Elahe Zakizadeh, Heiko Dartsch, Timo Aschenbrenner, Stephan Figge, Carsten Kruse, and Detlef Hommel — Institute of Solid State Physics, University of Bremen, Germany

Due to the large bandgap and high exciton binding energy of the nitrides, InGaN quantum dots (QDs) are promising candidates for single photon emission at room temperature. In this presentation we show results of micro photoluminescence measurements on InGaN quantum dots formed by a spinodal decomposition process in MOVPE [1]. The samples show quantum dot related photoluminescence in the blue-green spectral region. Simple GaN layers containing InGaN QDs have been investigated as well as a fully monolithically grown cavity structure with InGaN QDs at the antinode position of a cavity between two GaN/AlInN Bragg reflectors. Single line QD emission could be observed up to a temperature of 100 K. In order to achieve single line emission at higher temperatures a novel concept of introducing AlGaN or AlInN barriers for larger carrier confinement will be discussed and first results will be shown.

[1] C.Tessarek, et al., Phys. Rev. B 83, 115316 (2011)