Berlin 2012 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 96: Focus Session: Semiconductor Nanophotonics - Characterization on the Atomic Scale
HL 96.6: Hauptvortrag
Freitag, 30. März 2012, 12:15–12:45, ER 164
In situ synchrotron x-ray studies during metal-organic chemical vapor deposition of semiconductors — •Carol Thompson1,2, Matthew J. Highland2, Edith Perret2, Marie-Ingrid Richard3, Paul H. Fuoss2, Stephen K. Streiffer2, and G. Brian Stephenson2 — 1Northern Illinois Univ., DeKalb, IL, USA — 2Argonne National Lab., Argonne, IL, USA — 3Universite Paul Cezanne Aix-Marseille, Marseille, France
In-situ, time-resolved techniques provide valuable insight into the complex interplay of surface structural and chemical evolution occurring during materials synthesis and processing of semiconductors. Our approach is to observe the evolution of surface structure and morphology at the atomic scale in real-time during metal organic vapor phase deposition (MOCVD) by using grazing incidence x-ray scattering and x-ray fluorescence, coupled with visible light scattering. Our vertical-flow MOCVD chamber is mounted on a `z-axis' surface diffractometer designed specifically for these studies of the film growth, surface evolution and the interactions within a controlled growth environment. These techniques combine the ability of x-rays to penetrate a complex environment for measurements during growth and processing, with the sensitivity of surface scattering techniques to atomic and nanoscale structure. In this talk, we outline our program and discuss examples from our in-situ and real-time x-ray diffraction and fluoresence studies of InN, GaN, and InGaN growth on GaN (0001). Work supported by U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under contract DE-AC02-06CH11357.