Berlin 2012 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 97: Quantum Dots and Wires: Optical Properties IV (mainly Nitrides)
HL 97.5: Talk
Friday, March 30, 2012, 11:00–11:15, ER 270
Luminescence properties of InGaN quantum dots embedded in GaN nanowires — •Pascal Becker1, Max Kracht1, Florian Furtmayr1,2, Sangam Chatterjee3, Alexej Chernikov3, Philomela Komninou4, Thomas Kehagias4, and Martin Eickhoff1 — 1I. Physikalisches Institut, Justus-Liebig-Universität Gießen — 2Walter Schottky Institut, Technische Universität München — 3Fachbereich Physik, Philipps-Universität Marburg — 4Physics Department, Aristotle University of Thessaloniki
III-N nanowires (NWs) have attracted a lot of attention in recent years due to their high crystalline quality compared to III-N thin films. The realization of InGaN/GaN heterostructures embedded in GaN-NWs allows one to shift the photoluminescence emission energy into the visible spectral range and to improve its temperature stability. We report on the emission properties of InGaN quantum dots (QDs) embedded in GaN NWs grown by plasma assisted molecular beam epitaxy on n-type Si(111) substrates. A series of samples with varied QD-thickness was investigated by low temperature photoluminescence (PL), single wire micro-PL, and time-resolved PL measurements. Emission bands at 3.48 eV, around 2.5 eV and at approximately 3.15 eV are attributed to the GaN band gap, the QD emission, and interfacial defects, respectively. High resolution transmission electron microscopy analysis was performed on selected samples for structural characterization.