Berlin 2012 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 99: Organic Semiconductors: Transport
HL 99.11: Vortrag
Freitag, 30. März 2012, 12:15–12:30, EW 203
Scanning Kelvin Probe Microscopy on FIB-milled crosssections in organic semiconductor devices — •Rebecca Saive1,2, Florian Ullrich1,2, Lars Müller1,2, Michael Scherer1,2, Dominik Daume1,2, Michael Kröger1,2,3, and Wolfgang Kowalsky1,2,3 — 1InnovationLab GmbH, Heidelberg, Germany — 2Kirchhoff-Institut für Physik, Universität Heidelberg, Germany — 3Institut für Hochfrequenztechnik, Technische Universität Braunschweig, Germany
Scanning Kelvin Probe Microscopy (SKPM) offers the possibility to measure the surface potential in operating devices and thus revealing the charge carrier transport. We show that SKPM does not necessarily reflect the potential distribution in the region of charge transport but that measurement results are a superposition of all effects occuring in the bulk. Therefore we introduce a method to directly measure in the charge transport region. Via focused ion beam (FIB) we milled our samples and measure the device's crosssections with SKPM. With our combined SEM-FIB crossbeam and SPM microscope we prepare our devices in-situ which avoids surface degradation by water or oxygen.