Berlin 2012 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 99: Organic Semiconductors: Transport

HL 99.7: Vortrag

Freitag, 30. März 2012, 11:15–11:30, EW 203

Charge carrier injection properties of the Au-P3HT interface — Shahidul Alam, •Torsten Balster, and Veit Wagner — School of Engineering and Science,Jacobs University Bremen, Campus Ring 1, 28759 Bremen

The contact between the metal and the organic semiconductor is crucial for the device performance of an organic field effect transistors. To study the injection properties of the holes into the organic semiconductor vertical Au/rr-P3HT/Au structures on PET foil has been prepared and investigated in this study.
This structures with an area varying from 0.05 to 1.0 mm² and a P3HT film thickness of 270 nm were characterized using I-V-measurements. The devices showed asymmetric I-V curves, which are attributed to the exposure of the bottom Au contact to air during the processing of the sample in contrast to the top electrode, which was sputter coated on the P3HT film. Additional UV-Ozone treatment of the bottom electrode increased the current ratio between forward and reverse bias by a factor of two.
For lower bias voltages (<0.5V) the data were evaluated using thermionic emission and tunneling models. Whereas the latter gives barrier heights of ≈0.5 V and rather high ideality factors of more than 10, the tunneling model predicts a much smaller barrier. In the space charge limited region the curves were modelled using the mobility model of Vissenberg and Matters.