Berlin 2012 – wissenschaftliches Programm

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KR: Fachgruppe Kristallographie

KR 11: SYRS: Symposium Resistive Switching (joint symposium DS, DF, KR, HL – Organizers: Gemming, Dittmann)

KR 11.1: Hauptvortrag

Donnerstag, 29. März 2012, 15:00–15:30, H 0105

Redox-based resistive memories - recent progress — •Rainer Waser — Forschungszentrum Jülich, 52425 Jülich, and IWE2, RWTH Aachen University, 52056 Aachen, Section Fundamentals of Future Information Technology (JARA-FIT), Germany

A potential leap beyond the limits of Flash (with respect to write speed, write energies) and DRAM (with respect to scalability, retention times) emerges from nanoionic redox-based switching effects encountered in metal oxides (ReRAM). A range of systems exist in which ionic transport and redox reactions on the nanoscale provide the essential mechanisms for memristive switching. In two classes, the so-called electrochemical metallization memories, ECM, and the so-called valence change memories, VCM, the electrochemical nature of these memristive effects triggers a bipolar memory operation. In yet another class, the thermochemical effects dominate over the electrochemical effects in metal oxides (so-called thermochemical memories, TCM) which leads to a unipolar switching as known from the phase-change memories. In all systems, the defect structure turned out to be crucial for the switching process. The presentation will cover recent progress in understanding the fundamental principles in terms of microscopic processes, switching kinetics and retention times, as well as device reliability of bipolar ReRAM variants. Despite exciting results obtained in recent years, several challenges have to be met before these physical effects can be turned into a reliable industrial technology.