Berlin 2012 – scientific programme

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KR: Fachgruppe Kristallographie

KR 11: SYRS: Symposium Resistive Switching (joint symposium DS, DF, KR, HL – Organizers: Gemming, Dittmann)

KR 11.2: Invited Talk

Thursday, March 29, 2012, 15:30–16:00, H 0105

Electric Formation of Metal/SrTiO₃ Junctions and its Correlation to Multi-Dimensional Defects — •Dirk C. Meyer¹, Hartmut Stöcker¹, Juliane Hanzig¹, Florian Hanzig¹, Matthias Zschornak^1,2, Barbara Abendroth¹, and Sibylle Gemming² — ¹TU Bergakademie Freiberg, Institut für Experimentelle Physik, Leipziger Str. 23, 09596 Freiberg — ²Helmholtz-Zentrum Dresden-Rossendorf, Institut für Ionenstrahlphysik und Materialforschung, Bautzner Landstr. 400, 01328 Dresden

Regarding the successful use of strontium titanate with different doping within resistive switching memory cells, the presence of crystallographic defects seems to be an important prerequisite. Standard explanations for resistive switching rely on the redistribution of oxygen vacancies, however, this motion can be enhanced or prevented by higher-dimensional defects. Intrinsic defects in crystalline SrTiO₃ include point defects such as oxygen or strontium vacancies, line defects, stacking faults like Ruddlesden-Popper phases and precipitates (TiO₂, SrO etc.). Electric formation of the metal/oxide/metal cells is widely used as an initial step to enable resistive switching, but the interaction of the multi-dimensional defects during this treatment remains questionable. This talk will present several measurements that were performed in situ, i.e. during the application of an electric field, to investigate the effects of the electric formation on the real structure.