Berlin 2012 – scientific programme
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KR: Fachgruppe Kristallographie
KR 11: SYRS: Symposium Resistive Switching (joint symposium DS, DF, KR, HL – Organizers: Gemming, Dittmann)
KR 11.3: Invited Talk
Thursday, March 29, 2012, 16:00–16:30, H 0105
The Connecting between the Properties of Memristive Material Systems and Application Requirements — •Thomas Mikolajick1,2, Stefan Slesazeck1, and Hannes Mehne1 — 1NaMLab gGmbH, Nöthnitzer Str. 64, 01187 Dresden — 2Chair of Nanoelectronic Materials Technische Universitaet Dresden
In the last years large progress has been made to identify switching mechanisms in resistive switching materials and connect these to the materials systems used. The different switching mechanisms result in significantly different I-V characteristics of the switching behavior. As an example the switching can be bipolar or unipolar, abrupt or continuous etc. Additionally parameters like switching power, retention and endurance may show a characteristic fingerprint. In this talk the main mechanisms like thermo-chemical switching, valence change switching or electrochemical switching are compared to the requirements for different types of semiconductor memories like nonvolatile RAM, high density data memories or embedded memories and an assessment of the prospects of the different mechanisms for each system is given. Non-memory applications of memristive switching like xeromorphic circuits will also be taken into consideration.