Berlin 2012 – scientific programme
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KR: Fachgruppe Kristallographie
KR 11: SYRS: Symposium Resistive Switching (joint symposium DS, DF, KR, HL – Organizers: Gemming, Dittmann)
KR 11.5: Invited Talk
Thursday, March 29, 2012, 17:00–17:30, H 0105
Resistive switching memories: Mechanisms, modeling and scaling — •Daniele Ielmini — Dipartimento di Elettronica e Informazione and IUNET, Politecnico di Milano, Piazza L. da Vinci 32, 20133 Milano, Italy
Resistive switching memory (RRAM) devices are proposed as next mainstream technology for nonvolatile memories below the 10-nm node. However, to speed up the industrial development of RRAM, the research must still address several open issues, such as identifying a suitable select device, understanding the switching mechanism and predicting the device scalability.
In this talk, I will show experimental results for bipolar RRAM devices based on metal oxides (mostly HfOx), evidencing that the switching mechanism is a temperature and field-activated ion migration. Based on these experimental evidences, I will provide an analytical model for resistive switching which can be applied to oxide-based RRAM and chalcogenide-based conductive bridge RAM (CBRAM). The model allows for space, time and energy extrapolation for future RRAM generations. The extension of the analytical approach to a self-consistent numerical model for ion migration will be shown. The scaling tradeoff with reliability, e.g. random telegraph noise and data retention, will be finally discussed.