Berlin 2012 – scientific programme
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KR: Fachgruppe Kristallographie
KR 11: SYRS: Symposium Resistive Switching (joint symposium DS, DF, KR, HL – Organizers: Gemming, Dittmann)
Thursday, March 29, 2012, 15:00–17:30, H 0105
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15:00 | KR 11.1 | Invited Talk: Redox-based resistive memories - recent progress — •Rainer Waser |
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15:30 | KR 11.2 | Invited Talk: Electric Formation of Metal/SrTiO3 Junctions and its Correlation to Multi-Dimensional Defects — •Dirk C. Meyer, Hartmut Stöcker, Juliane Hanzig, Florian Hanzig, Matthias Zschornak, Barbara Abendroth, and Sibylle Gemming |
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16:00 | KR 11.3 | Invited Talk: The Connecting between the Properties of Memristive Material Systems and Application Requirements — •Thomas Mikolajick, Stefan Slesazeck, and Hannes Mehne |
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16:30 | KR 11.4 | Invited Talk: Mechanism of resistive switching in bipolar transition metal oxides — •Marcelo Rozenberg |
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17:00 | KR 11.5 | Invited Talk: Resistive switching memories: Mechanisms, modeling and scaling — •Daniele Ielmini |