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KR: Fachgruppe Kristallographie

KR 5: Poster I – including Multiferroics (MA with DF, DS, KR, TT)

KR 5.28: Poster

Dienstag, 27. März 2012, 12:15–15:15, Poster A

Bipolar resistive switching at manganite/manganite interfaces — •Christin Kalkert, Jon-Olaf Krisponeit, Vasily Moshnyaga, Bernd Damaschke, and Konrad Samwer — I. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen

Bipolar resistive switching stands for remanent switching of resistivity by application of electric fields reversible by opposite polarities. This phenomenon is observed in a wide variety of perovskite materials and holds the potential of creating new resistive random access memory devices. La_0.7Sr_0.3MnO₃ (LSMO) manganite films were prepared by using the metalorganic aerosol deposition technique. On Al₂O₃ substrates the manganite films show nanocolumnar growth with different growth orientations as determined by x-ray diffraction and TEM analysis. The films were structured by electron beam lithography into LSMO paths/bridges between larger LSMO contact areas; after a second lithography step Au/Cr films were deposited onto the contact areas. These structures show bipolar resistive switching, which can also be induced and probed by means of conductive AFM. The C-AFM measurements show that the switching takes place at the manganite/manganite interfaces, i.e. at the boundaries of the nanocolumns. The resistive switching of the structures and the C-AFM measurements are discussed in terms of a local structural transformation at the manganite/manganite interfaces. (APL 99, 132512, (2011))

Financial support by DFG via SFB 602, TPA2 and the Leibniz Program is ackowledged.