Berlin 2012 – scientific programme

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KR: Fachgruppe Kristallographie

KR 5: Poster I – including Multiferroics (MA with DF, DS, KR, TT)

KR 5.58: Poster

Tuesday, March 27, 2012, 12:15–15:15, Poster A

Electrical characterization of nanoscaled CoFeB|MgO|CoFeB-based magnetic tunneljunctions (MTJs) for thermal spin-transfer-torque (TST) — •Johannes Christian Leutenantsmeyer¹, Marvin Walter¹, Vladyslav Zbarsky¹, Patrick Peretzki², Henning Schuhmann², Michael Seibt², and Markus Münzenberg¹ — ¹I. Physikalisches Institut, Georg-August-Universität Göttingen, 37077 Göttingen — ²IV. Physikalisches Institut, Georg-August-Universität Göttingen, 37077 Göttingen

MTJs are of general interest because of their quantum mechanical properties such as the tunnel-magnetoresistance (TMR), spin-transfer-torque and the recently measured magneto Seebeck effect.

Here we present the studies about our nanoscaled MTJs. The junctions are grown in UHV at base pressures around 5×10⁻¹⁰ mbar. The thin films are deposited by magnetron sputtering (Ta, CoFeB) and E-Beam evaporation (MgO, Ru). After annealing, the samples are patterned with bondpads via optical lithography, which enable us to contact sub-micron-scaled junctions. The MTJ itself is written by e-beam lithography and etched by argon-ion milling. With a high resolution e-beam resist, we reach a junction size of approximately 50 nm. The smaller junctions require the transition to thinner barriers (down to 3 monolayers), which we develop for the observation of new phenomena, like the theoretically predicted TST. Characterization shows TMR of up to 230% and large magneto Seebeck effect.

We gratefully acknowledge the funding of Deutsche Forschungsgemeinschaft through SFB 602 and SPP SpinCaT.