Berlin 2012 – wissenschaftliches Programm
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KR: Fachgruppe Kristallographie
KR 5: Poster I – including Multiferroics (MA with DF, DS, KR, TT)
KR 5.60: Poster
Dienstag, 27. März 2012, 12:15–15:15, Poster A
Domain wall dependent magnetoresistance at zero field in electromigrated ferromagnetic nanocontacts. — •Mohamad-Assaad Mawass1,5, Robert M. Reeve1, Jakoba Heidler2, Jan Rhensius2, 3, Laura J. Heyderman2, Regina Hoffmann4, André Bisig2, 3, and Mathias Kläui1, 2, 3 — 1Johannes Gutenberg-Universität Mainz, Mainz, Germany — 2Paul Scherrer Institut, Villigen, Switzerland — 3Universität Konstanz, Konstanz, Germany — 4Physikalisches Institut and DFG-Center for Functional Nanostructures, Karlsruhe Institute of Technology, Karlsrue, Germany — 5Max-Planck-Institut für Intelligente Systeme, Stuttgart, Germany
Magnetotransport measurements of magnetic nanocontacts have been studied with the aim to understand the interactions between spin-polarized charge carriers and magnetization on the nanoscale. Here, we study the evolution of magnetoresistance (MR) in electromigrated ferromagnetic break junctions obtained in clean ultra-high vacuum (UHV) conditions. While previously permalloy (Ni80Fe20) nanocontacts with variable constriction width have been investigated [A. Patra et al., PRB 82, 134447 (2010)], the question of the influence of the alloy nature on the observed MR effects remains. The in-situ controlled electromigration of notched half ring structures under UHV conditions for pure Ni and Fe contacts was investigated and similarly large effects could be observed. In particular, large MR effects at remanence are found in contacts that approach the atomic limit. Additionally, our measurements show a sign-change of the MR at low conductance levels and this is compared to recent theoretical predictions.