Berlin 2012 – scientific programme

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KR: Fachgruppe Kristallographie

KR 5: Poster I – including Multiferroics (MA with DF, DS, KR, TT)

KR 5.65: Poster

Tuesday, March 27, 2012, 12:15–15:15, Poster A

Spin density distribution and Hanle lineshapes of injected spins into n-GaAs — •Bernhard Endres, Mariusz Ciorga, Robert Wagner, Sebastian Ringer, Martin Utz, Dominique Bougeard, Dieter Weiss, Christian H. Back, and Günther Bayreuther — Universität Regensburg

Spin extraction into a ferromagnetic GaMnAs contact from an n-GaAs channel across an Esaki diode structure was measured by cross-sectional imaging of the spin polarization in GaAs [1,2]. The resulting spin density distribution in the 1 μm thick GaAs channel shows a strong bias dependence with the maximum polarization at the contact edge opposite to the maximum charge current. This behavior cannot be described by a frequently used one-dimensional model whereas two-dimensional numerical simulations of the electron drift and spin diffusion reproduce the observed distribution quite well. Even at the nominally field-free contact edge electron drift must be taken into account because of the inhomogeneous current density. As a consequence, if Hanle measurements are fitted with a one-dimensional drift-diffusion function as usually done they yield spin lifetimes which may strongly depend on the distance to the contact and the applied bias voltage. In contrast, a two-dimensional fit including the nonuniform current density provides spin lifetimes nearly independent of bias and contact distance. The remaining variations can be explained by electric fields around the contact area. [1] P. Kotissek et al., Nature Phys. 3, 872 (2007) [2] B. Endres et al., J. Appl. Phys. 109, 07C505 (2011)