Berlin 2012 – scientific programme
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KR: Fachgruppe Kristallographie
KR 5: Poster I – including Multiferroics (MA with DF, DS, KR, TT)
KR 5.66: Poster
Tuesday, March 27, 2012, 12:15–15:15, Poster A
Fe3O4/ZnO: A high-quality magnetic oxide-semiconductor heterostructure by reactive deposition — •Ozan Kirilmaz1, Sebastian Brück1,2, Markus Paul1, Andreas Müller1, Eberhard Goering3, Jo Verbeeck4, He Tian4, Michael Sing1, and Ralph Claessen1 — 1Experimentelle Physik 4, Universität Würzburg, D-97074 Würzburg, Germany — 2University of New South Wales, School of Physics, Sydney NSW 2052, Australia — 3Max Planck Institute for Intelligent Systems, D-70569 Stuttgart, Germany — 4Electron Microscopy for Materials Science, University of Antwerp, 2020 Antwerp, Belgium
Magnetite (Fe3O4) is ranked among the most promising materials to be used as a spin injector into a semiconducting host. We demonstrate epitaxial growth of Fe3O4 films on ZnO which presents a further step for polarized spin injection into semiconductors. Regarding volume properties of the films, X-ray photoelectron spectroscopy evidences that the iron-oxide is phase-pure and stoichiometric magnetite. Diffraction measurements indicate highly oriented epitaxy and complete structural relaxation. The magnetic behavior shows a slow approach to saturation at high fields in comparison with bulk crystals. The typical (111) surface structure of Fe3O4 is observed already at the early growth stage. Due to island growth, domain boundaries form upon coalescence of the islands. The island growth enables partial relaxation of the misfit strain. X-ray resonant magnetic reflectometry reveals that only the very first monolayers of Fe3O4 at the interface exhibit a reduced magnetization, presumably related to the presence of the ZnO substrate.