Berlin 2012 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
KR: Fachgruppe Kristallographie
KR 9: Poster – Crystallography in Nanoscience
KR 9.2: Poster
Mittwoch, 28. März 2012, 15:00–17:30, Poster E
Analysis of defects in GaAs/InAs core/shell nanowires by means of Moiré pattern — •Torsten Rieger1,2, Mihail Ion Lepsa1,2, Thomas Schäpers1,2, and Detlev Grützmacher1,2 — 1Peter Grünberg Institute - 9, Forschungszentrum Jülich, 52425 Jülich, Germany — 2JARA-Fundamentals of Future Information Technology
Semiconductor nanostructures containing heterostructures are promising for future (opto-) electronic devices. GaAs/InAs core/shell nanowires (NWs) are an example for such a self-assembled nanostructure having a high lattice mismatch. Apart from the usual mixture of the zinc blende and wurtzite crystal structure in III-V NWs, this lattice mismatch causes additional defects. Here, we present a detailed study about such defects observed in conventional bright field transmission electron microscopy (BF-TEM) and corresponding Moiré fringe pattern. Threading dislocations as well as different kinds of stacking faults are identified. The results are correlated with the growth mechanism of the InAs shell.