Berlin 2012 – scientific programme

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MA: Fachverband Magnetismus

MA 18: Joint Session "Magnetic Semiconductors" (jointly with HL)

MA 18.12: Talk

Tuesday, March 27, 2012, 12:30–12:45, H 0112

Antiferromagnetism in CuMn-V compounds: from semimetal to semiconductor antiferromagnets — •Frantisek Maca, Jan Masek, and Tomas Jungwirth — Institute of Physics ASCR, Prague, Czech Republic

We report on a theoretical study of CuMn-V antiferromagnets. Previous works showed low-temperature antiferomagnetism and semimetal electronic structure of the semi-Heusler CuMnSb. We present theoretical predictions of high-temperature antiferromagnetism in the stable orthorhombic phases of CuMnAs and CuMnP. The electronic structure of CuMnAs is at the transition from a semimetal to a semiconductor and we predict that CuMnP is a semiconductor.

We show that the transition to a semiconductor-like band structure upon introducing the lighter group-V elements is present in both the metastable semi-Heusler and the stable orthorhombic crystal structures. On the other hand, the orthorhombic phase is crucial for the high Néel temperature. The first experimental results are consistent with the theory predictions.[1]

[1] F. Maca, J. Masek, O. Stelmakhovych, X. Marti, K. Uhlirova, P. Beran, H. Reichlova, P. Wadley, V. Novak, T. Jungwirth, J. Magn. Magn. Mater. (2011) in print.