Berlin 2012 – scientific programme

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MA: Fachverband Magnetismus

MA 18: Joint Session "Magnetic Semiconductors" (jointly with HL)

MA 18.4: Talk

Tuesday, March 27, 2012, 10:15–10:30, H 0112

Magnetization of Mn implanted Ge annealed by flash lamp — •Zenan Jiang, Danilo Bürger, Slawomir Prucnal, Kun Gao, Wolfgang Skorupa, Heidemarie Schmidt, Manfred Helm, and Shengqiang Zhou — Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, Dresden, Germany

Ge-based diluted magnetic semiconductors (DMS) have drawn extensive attentions over the past decades due to the potential to be applied in spintronic devices and to be integrated with the mainstream Si microelectronics. The hole-mediated effect in DMS provides the possibility to realize the control of magnetic properties by the electrical control of free carriers. In this contribution, Mn implanted Ge with the Mn concentrations between 2 and 10% and annealed subsequently with flash lamp was investigated and discussed. All samples show ferromagnetism with the Curie temperature in the range from 250 to 300 K which may be interpreted as the co-contribution of the Ge matrix diluted with Mn ions and of Mn-rich nanoclusters[1]. SQUID measurements show evidence that the Mn-rich nanoclusters may have multiple distinct magnetic phases or a bimodal size distribution. It is also inferred that more Mn atoms are possibly incorporated into the Ge lattice with higher annealing energy using flash lamp annealing at 3 ms time scale. The enhancement of magnetoresistance is consistent with the magnetization as well as the inhomogeneous nature of the implanted layer.

[1] Shengqiang Zhou et al., PHYSICAL REVIEW B 81, 165204 (2010)