Berlin 2012 – scientific programme

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MA: Fachverband Magnetismus

MA 18: Joint Session "Magnetic Semiconductors" (jointly with HL)

MA 18.8: Talk

Tuesday, March 27, 2012, 11:30–11:45, H 0112

Anomalous hysteretic Hall effect in a ferromagnetic, Mn-rich, amorphous Ge:Mn nano-network — •Danilo Bürger, Shengqiang Zhou, Marcel Höwler, Xin Ou, György Kovacs, Helfried Reuther, Arndt Mücklich, Wolfgang Skorupa, Manfred Helm, and Heidemarie Schmidt — Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany

The read out of the magnetization state in magnetic semiconductors by electrical Hall resistance measurements makes it possible to use ferromagnetic semiconductors in nonvolatile memories. In a previous work [1], we fabricated ferromagnetic Ge:Mn by Mn ion implantation and pulsed laser annealing (PLA) and observed hysteretic Hall resistance below 10 K. By applying different PLA conditions we fabricated a percolating, Mn-rich, amorphous Ge:Mn nano-network with hysteretic Hall resistance up to 30 K. This nano-network is embedded in crystalline Ge:Mn between 5 nm and 40 nm under the sample surface. We applied chemical and physical etching to confirm the contribution of the nano-network to the magnetic properties. The nanonet has a significant influence on the correlation between magnetism and anomalous Hall resistance. In the future such nano-networks may be used to spin-polarize free charge carriers in semiconductors at room temperature. [1] S. Zhou et al., Phys. Rev. B 81, 165204 (2010)