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MA: Fachverband Magnetismus

MA 20: Poster I - Biomagnetism, FePt Nanoparticles, Magnetic Particles/Clusters, Magnetic Materials, Magnetic Semiconductors, Half-metals/Oxides, Multiferroics, Topological Insulators, Spin structures/Phase transitions, Electron theory/Computational micromagnetics, Magnetic coupling phenomena/Exchange bias, Spin-dependent transport, Spin injection/spin currents, Magnetization/Demagnetization dynamics, Magnetic measurement techniques

MA 20.65: Poster

Dienstag, 27. März 2012, 12:15–15:15, Poster A

Spin density distribution and Hanle lineshapes of injected spins into n-GaAs — •Bernhard Endres, Mariusz Ciorga, Robert Wagner, Sebastian Ringer, Martin Utz, Dominique Bougeard, Dieter Weiss, Christian H. Back, and Günther Bayreuther — Universität Regensburg

Spin extraction into a ferromagnetic GaMnAs contact from an n-GaAs channel across an Esaki diode structure was measured by cross-sectional imaging of the spin polarization in GaAs [1,2]. The resulting spin density distribution in the 1 μm thick GaAs channel shows a strong bias dependence with the maximum polarization at the contact edge opposite to the maximum charge current. This behavior cannot be described by a frequently used one-dimensional model whereas two-dimensional numerical simulations of the electron drift and spin diffusion reproduce the observed distribution quite well. Even at the nominally field-free contact edge electron drift must be taken into account because of the inhomogeneous current density. As a consequence, if Hanle measurements are fitted with a one-dimensional drift-diffusion function as usually done they yield spin lifetimes which may strongly depend on the distance to the contact and the applied bias voltage. In contrast, a two-dimensional fit including the nonuniform current density provides spin lifetimes nearly independent of bias and contact distance. The remaining variations can be explained by electric fields around the contact area. [1] P. Kotissek et al., Nature Phys. 3, 872 (2007) [2] B. Endres et al., J. Appl. Phys. 109, 07C505 (2011)