Berlin 2012 – scientific programme

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MA: Fachverband Magnetismus

MA 33: Magnetic Coupling Phenomena/ Exchange Bias

MA 33.3: Talk

Wednesday, March 28, 2012, 15:45–16:00, EB 202

Antiferromagnetic coupling across silicon with Fe3Si magnetic layers — •Rashid Gareev¹, Sergey Makarov², Alexey Drovosekov³, Markus Härtinger¹, Georg Woltersdorf¹, Werner Keune², Heiko Wende², and Christian Back¹ — ¹University of Regensburg, Universitätstrasse 31, 93040 Regensburg, Germany — ²University of Duisburg-Essen, Lotharstr. 1, 47048 Duisburg, Germany — ³Kapitza Institute for Physical Problems, Kosygina st. 2, 117334 Moscow, Russia

Combined ferromagnet/semiconductor Fe/Si/Fe tunneling structures demonstrate strong antiferromagnetic coupling (AFC) [1]. Formation of magnetic silicides at interfaces affects AFC as demonstrated by Co interface *dusting* [2]. Substitution of Fe by magnetic Fe3Si can increase interface spin-polarization, influence AFC and reduce interface diffusion. Epitaxial growth of structures with Si spacers and Fe3Si magnetic layers was controlled by RHEED. We realized AFC in Fe3Si-based structures grown on both GaAs(001) and Si(001) substrates. Formation of interfacial iron-silicides was confirmed by Conversion-electron Mössbauer spectroscopy (CEMS) utilizing 0.5 nm-thick interfacial 57Fe tracing layers. The room temperature AFC for samples grown on GaAs(001) is substantially weaker compared to Fe/Si/Fe and reaches /J/~10 mkJ/m2 for 1.2 nm-thick Si. For structures grown on Si(001) AFC is well above /J/~ 0.1 mJ/m2. The possible reasons for observed AFC behavior are discussed. Support by the Project DFG 9209379 is appreciated. [1]. R.R. Gareev et al, J. Magn. Magn. Mater. 240, 235 (2002). [2]. R.R. Gareev et al, AIP Advances 1, 042155 (2011).