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MA: Fachverband Magnetismus
MA 4: Spin-dependent Transport Phenomena
MA 4.3: Talk
Monday, March 26, 2012, 10:00–10:15, H 1012
The Planar Hall Effect in exchange-biased nanocrystalline Co60Fe20B20 — •Klaus Seemann1, Frank Freimuth2, Florian Kronast3, Sergio Valencia3, Hongbin Zhang2, Stefan Blügel2, Yuriy Mokrousov2, Daniel Bürgler1, and Claus Schneider1 — 1Peter Grünberg Institut (PGI-6) and Jülich-Aachen Research Alliance (JARA-FIT), Forschungszentrum Jülich, D-52425 Jülich, Germany — 2Peter Grünberg Institut (PGI-1), Institute for Advanced Simulation, and Jülich-Aachen Research Alliance (JARA-FIT), Forschungszentrum Jülich, D-52425 Jülich, Germany — 3Helmholtz-Zentrum Berlin für Materialien und Energie, Berlin, Germany
An angle dependent analysis of the planar Hall effect (PHE) in nanocrystalline single-domain Co60Fe20B20 thin films is reported. In a combined experimental and theoretical study we show that the transverse resistivity of the PHE is entirely driven by anisotropic magnetoresistance (AMR). Our results for Co60Fe20B20 obtained from first principles theory in conjunction with a Boltzmann transport model take into account the nanocrystallinity and the presence of 20 at. % boron. The ab initio AMR ratio of 0.12% agrees well with the experimental value of 0.22%. We demonstrate that the anomalous Hall effect contributes negligibly in the present case. We complete our study by field dependent and element specific microscopic investigations based on X-ray magnetic dichroism (XMCD-PEEM) of exchange biased Co60Fe20B20.
[1] K. M. Seemann et al., Phys. Rev. Lett. 107, 086603, 2011