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MA: Fachverband Magnetismus

MA 4: Spin-dependent Transport Phenomena

MA 4.3: Vortrag

Montag, 26. März 2012, 10:00–10:15, H 1012

The Planar Hall Effect in exchange-biased nanocrystalline Co₆₀Fe₂₀B₂₀ — •Klaus Seemann¹, Frank Freimuth², Florian Kronast³, Sergio Valencia³, Hongbin Zhang², Stefan Blügel², Yuriy Mokrousov², Daniel Bürgler¹, and Claus Schneider¹ — ¹Peter Grünberg Institut (PGI-6) and Jülich-Aachen Research Alliance (JARA-FIT), Forschungszentrum Jülich, D-52425 Jülich, Germany — ²Peter Grünberg Institut (PGI-1), Institute for Advanced Simulation, and Jülich-Aachen Research Alliance (JARA-FIT), Forschungszentrum Jülich, D-52425 Jülich, Germany — ³Helmholtz-Zentrum Berlin für Materialien und Energie, Berlin, Germany

An angle dependent analysis of the planar Hall effect (PHE) in nanocrystalline single-domain Co₆₀Fe₂₀B₂₀ thin films is reported. In a combined experimental and theoretical study we show that the transverse resistivity of the PHE is entirely driven by anisotropic magnetoresistance (AMR). Our results for Co₆₀Fe₂₀B₂₀ obtained from first principles theory in conjunction with a Boltzmann transport model take into account the nanocrystallinity and the presence of 20 at. % boron. The ab initio AMR ratio of 0.12% agrees well with the experimental value of 0.22%. We demonstrate that the anomalous Hall effect contributes negligibly in the present case. We complete our study by field dependent and element specific microscopic investigations based on X-ray magnetic dichroism (XMCD-PEEM) of exchange biased Co₆₀Fe₂₀B₂₀.

[1] K. M. Seemann et al., Phys. Rev. Lett. 107, 086603, 2011