Berlin 2012 – scientific programme

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MA: Fachverband Magnetismus

MA 48: PhD Student Symposium: "Spintronics on the Way to modern Storage Technology II", Organization: "Univ. Mainz team"

MA 48.3: Talk

Thursday, March 29, 2012, 14:00–14:15, BH 243

Improved reliability of magnetic field programmable gate arrays through the use of memristive tunnel junctions — •Jana Münchenberger, Patryk Krzysteczko, Günter Reiss, and Andy Thomas — Bielefeld University, Thin Films and Physics of Nanostructures, 33615 Bielefeld

Since the recent, successful implementation of the long-hypothesized memristor, its use in neuronal computing and in the reproduction of biological neural networks has gained increasing attention. In addition to the development of these new applications, the growing number of devices with memristive properties is promising to improve already established technologies. We use the recently reported memristance in magnesium-oxide-based magnetic tunnel junctions (MTJs) to improve the error tolerance in magnetic random access memory and magnetic field programmable logic. The MTJs have a thin barrier of 1.3 nm and were structured by e-beam lithography and ion beam etching. They show a tunnel-magnetoresistance (TMR) ratio of 100% and a memristive effect of about 6%. Using this effect, we can show that it is possible to tailor the resistance of the MTJs and thus compensate for resistance fluctuations that occur as a result of the fabrication process. Furthermore, the MTJs maintain stable resistances and do not need to be periodically refreshed.