Berlin 2012 – scientific programme
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MA: Fachverband Magnetismus
MA 52: Poster II - Magnetic Heusler compounds, Magnetic shape memory alloys, Thin Films, Micro-/Nano-structured magnetic materials, Graphene, Spins in organics, Magnetic imaging, Surface Magnetism, Spin excitations/Torque, Spincaloric transport
MA 52.24: Poster
Friday, March 30, 2012, 11:00–14:00, Poster A
CPP – GMR using the Heusler alloy Co2FeAl0.4Si0.6. — •F. Casper1, K. Rott2, G. Reiss2, and C. Felser1,3 — 1Institute of Inorganic Chemistry and Analytical Chemistry, Johannes Gutenberg - University, Mainz, Germany — 2Department of Physics, Bielefeld University, Bielefeld, Germany — 3Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
Large tunneling magneto resistance (TMR) values were reported from magnetic tunneling junctions (MTJs) using Heusler alloys, which indicates a high spin polarization of the electrode materials. These high spin polarized materials should also enhance current-perpendicular-to-plane giant magneto resistance (CPP GMR). Most of these experiments were performed on small MgO-substrates which are not suitable for an industrial application. We implemented the Heusler compound Co2FeAl0.4Si0.6 (CFAS) into an industrial production. A twelve inch target is used to sputter a Cr(10)/Ag(50)/CFAS(10)/Ag(5)/CFAS(10)/Ru(8) spin valve structure on silicon and MgO wafers. The structure of the films was determined by x-ray diffraction. The film was microfabricated to form a pillars with the size of 0.2 X 0.1 µm2 up to 1.0 X 0.4 µm2 for the measurement of CPP-GMR. Depending on the annealing temperature the TMR ratio reaches values of 7% on MgO and 1.2% on Si wafers at room temperature. This work is supported by the Federal Ministry for Education and Research BMBF, project "‘Multimag"’.