Berlin 2012 – scientific programme

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MI: Fachverband Mikrosonden

MI 2: TEM- and SEM-based material analysis

MI 2.5: Talk

Monday, March 26, 2012, 11:30–11:45, EMH 225

Chemical analysis between the mm and atomic scale using silicon drift detectors — •Meiken Falke, Ralf Terborg, Tobias Salge, Samuel Scheller, Daniel Goran, Ulrich Waldschläger, and Martin Rohde — Bruker Nano GmbH, Schwarzschildstr.12, 12489 Berlin, Germany

Silicon drift detectors (SDDs) were originally developed to avoid the use of liquid nitrogen for cooling X-ray spectrometers during space missions. Now SDDs are about to revolutionize energy dispersive X-ray spectroscopy (EDS), since they provide fast and robust readout of high X-ray input count rates with superb energy resolution, particularly at the low energy end, enabling the detection and quantification of even light elements such as Boron. SDDs are used for chemical analysis in integrated multiple detector solutions as well as in powerful stand- alone systems for standard and aberration corrected transmission (TEM) and scanning electron microscopy (SEM). The speed of data acquisition and analysis can be combined with other techniques giving crystallographic information or higher energy resolution, such as EBSD on SEM and EELS on TEM. Furthermore, fast EDS data acquisition for tomography and the respective reconstruction of element compositions in 3D are reality now. We want to explain the SDD technology and show data achieved so far, which provide a vision for future possibilities.