Berlin 2012 – scientific programme

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MI: Fachverband Mikrosonden

MI 8: Poster – Microanalysis and microscopy

MI 8.16: Poster

Wednesday, March 28, 2012, 15:00–17:30, Poster E

Proton Beam Writing in semiconductors: A new approach towards MEMS devices — Martina Schulte-Borchers, •Ulrich Vetter, and Hans Hofsäss — 2. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany

Proton Beam Writing is a fast direct-write method which allows for the fabrication of structures in bulk semiconductors as well as in photoresists in the micrometer range and with high aspect ratios. The structuring of semiconductors is enabled simply by scanning the proton beam over the semiconductor surface in the desired pattern. After irradiation of selected areas of a near surface region with protons in the energy range of a few MeV, structures can be revealed by etching under appropoate conditions, e.g. electrochemical etching for GaAs.
In this work, we will discuss the suitability of proton beam writing for MEMS fabrication on the example of GaAs. We will show our new results of three-dimensional structuring in only one lithography and irradiation step which employes the usage of different proton fluences instead of varying beam energies [1]. This fast and easy 3D production method and the smooth sidewalls as well as good structure quality make Proton Beam Writing an interesting tool for the manufacturing of prototypes in the field of MEMS devices.
[1] M. Schulte-Borchers, U. Vetter, T. Koppe, H. Hofsaess: "3D microstructuring in p-GaAs with Proton Beam Writing using multiple ion fluences", provisionally accepted for publication in J. microeng. micromech.