Berlin 2012 – wissenschaftliches Programm
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MI: Fachverband Mikrosonden
MI 8: Poster – Microanalysis and microscopy
MI 8.6: Poster
Mittwoch, 28. März 2012, 15:00–17:30, Poster E
Spectroscopic investigation of silicon polymorphs formed by indentation — •Martin Schade1, Bianca Haberl2, and Hartmut S. Leipner1 — 1Interdisziplinäres Zentrum für Materialwissenschaften, Martin-Luther-Universität Halle-Wittenberg, D-06099 Halle — 2Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 0200, Australia
Silicon polymorphs have been prepared by means of indentation of Si(100) surfaces. An indenter with a spherical tip has been used at a load of around 700 mN. A slow unloading rate of around 1.5 mN/s was used in order to form silicon polymorphs in the area indented and avoid amorphization. The formation of silicon polymorphs was verified subsequently by Raman spectroscopy. Related to the load applied only the formation of the meta-stable silicon phases Si-III, Si-IV and Si-XII was possible. Furthermore, electron transparent samples have been prepared in order to apply transmission electron microscopy and electron energy loss spectroscopy. A comparison of the Si L2,3 edges of c-Si (Si-I) and Si-III/Si-XII will be presented. In addition, the spectra acquired are compared to simulations.