Berlin 2012 – wissenschaftliches Programm
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MM: Fachverband Metall- und Materialphysik
MM 17: Poster Session
MM 17.69: Poster
Montag, 26. März 2012, 17:00–19:00, Poster B
Hydrogenation behavior of thin epitaxial Nb films: Film preparation and hydrogen gas loading — •Vladimir Burlaka1, Stefan Wagner1, Anthony Bell2, and Astrid Pundt1 — 1Universität Göttingen, Institut für Materialphysik, Friedrich-Hund-Platz 1, 37077 Göttingen — 2HASYLAB Hamburg, Germany
For thin films below a critical film thickness it was reported [1,2] that stress release via the formation of dislocations during hydrogen loading is energetically suppressed. To study this, Nb-H thin films are used as a model system. As a first step, the proper substrate temperatures for atomically smooth and epitaxial Nb film growth of thin films (20nm) on sapphire substrates during UHV sputter deposition were determined. In order to monitor hydride precipitation in the Nb films during hydrogen gas loading, in-situ STM measurements for 20 nm film thickness were performed, characterizing the films surface morphology in the as prepared and in the hydrogenated state.
Hydrogen induced lattice parameter changes of the Nb films were investigated by in-situ X-ray diffraction measurements during hydrogen gas loading at the synchrotron radiation facility in HASYLAB, Hamburg. It was shown that for a film with 20 nm, peak shifts change. We interpret this with a reduced dislocation formation.
[1] K. Nörthemann, A. Pundt, PHYS. REV. B 78, 014105 (2008)
[2] S. Wagner, H. Uchida, V. Burlaka et al., Scripta Materialia, Vol.64, Issue 10, p. 978-981 (2011)
This research was kindly supported by the DFG via PU131/9-1 and HASYLAB via project II-20060117.