Berlin 2012 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 10: [DS] Focused electron beam induced processing for the fabrication of nanostructures I (focused session, jointly with O – Organizers: Huth, Marbach)

O 10.1: Hauptvortrag

Montag, 26. März 2012, 15:00–15:30, H 0111

Focused electron beam lithography in the 1-10 nanometer range. — •Cornelis Wouter Hagen — Delft University of Technology, Charged particle Optics Group, Lorentzweg 1, 2628CJ Delft, The Netherlands

What if one would like to make something really small, for instance something consisting of only a few thousand atoms, then how would one do it? And what if one would also like to have control over its final shape and its composition? How could that be achieved? The answer is: with focused electron beam induced processing (FEBIP), because an electron beam can be focused down to a tiny sub-nanometer spot. When such a beam is scanned over a substrate with an adsorbed monolayer of precursor molecules, the molecules are dissociated. Only at the positions where the electron beam has been, solid fragments are left behind at the surface, forming a high-resolution pattern. I will review what we have learned about this process, focusing on the superb resolution, and the fundamentals of the dissociation process. To turn FEBIP into a user-friendly lithography technique, dedicated instruments will have to be developed. I will sketch the route that we envision towards such instrumentation.