Berlin 2012 – scientific programme
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O: Fachverband Oberflächenphysik
O 16: Scanning probe methods II
O 16.10: Talk
Monday, March 26, 2012, 18:15–18:30, MA 043
Scanning Microwave Microscopy Mapping of Semiconducting and Dielectric Components in CMOS Logic devices — •Matthias A. Fenner1, Thomas Schweinböck2, and Jesper Witteborn2 — 1Agilent Technologies, Lyoner Str. 20, 60528 Frankfurt, Germany — 2Infineon Technologies AG, Am Campeon 12, 85579 Neubiberg, Germany
We report Scanning Microwave Microscopy (SMM) investigations of CMOS logic devices. SMM combines Atomic Force Microscopy (AFM) and a microwave Vector Network Analyzer to map the microwave signal reflected from the tip sample junction. The reflected signal depends on the impedance of the junction [1]. Varying dielectric and semiconducting material properties lead to modified impedances and can thus be detected. Applying a low frequency AC bias between tip and sample leads to modulation of the semiconductor space charge region and the reflected signal [2]. Both signals can be acquired simultaneously.
Cross sections of 90-nm technology node CMOS logic devices have been prepared and investigated using SMM to map dielectric properties and dopant density.
[1] Huber, H.P., et al., Review of Scientific Instruments, 2010. 81(11), p. 113701-9. [2] Smoliner, J., et al., Journal of Applied Physics, 2010. 108(6), p. 064315-7.