Berlin 2012 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 16: Scanning probe methods II
O 16.3: Vortrag
Montag, 26. März 2012, 16:30–16:45, MA 043
Magnetoresistive Tunnelling Structures with Magnetostrictive Electrodes as Sensors for Atomic Force Microscopy — •Tobias Meier1, Ali Tavassolizadeh2, Dirk Meyners2, and Hendrik Hölscher1 — 1Institute of Microstructure Technology, Karlsruhe Institute of Technology, D-76021 Karlsruhe, Germany — 2Inorganic Functional Materials, Christian-Albrechts-Universität zu Kiel, D-24118 Kiel, Germany
We introduce a new approach on self-sensing cantilevers for the atomic force microscopy using magnetoresistive tunnelling structures (TMR-Sensors). As the resistance of a tunnelling barrier between two ferromagnetic electrodes strongly depends on the magnetisation of the electrodes material, one can measure the orientation of the magnetisation of the electrodes by measuring the resistance of the tunnelling barrier. Combining such a layer system with magnetostrictive materials, one can change the magnetisation of one electrode by applying mechanical strain and stress to the electrode and therefore change the resistance of the tunnelling barrier. Such TMR-Sensors show huge gauge-factors and can be integrated on an atomic force cantilever to measure its deflection.