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O: Fachverband Oberflächenphysik
O 18: Spin-orbit interaction
O 18.3: Vortrag
Montag, 26. März 2012, 16:30–16:45, A 060
Manipulating the Rashba-type spin splitting of Pb quantum well states through interface engineering and the substrate charge density — •Bartosz Slomski1,2, Gabriel Landolt1,2, Jürg Osterwalder2, and J. Hugo Dil1,2 — 1Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland — 2Physik-Institut, Universität Zürich, CH-8057 Zürich, Switzerland
Using spin and angle resolved photoemission spectroscopy we show how the Rashba-type spin splitting in Pb quantum well states [1] can be controlled either by changing the metal-substrate interface or the donor concentration of the n-type Si(111) substrate. Replacing the wetting layer from Pb to Bi reduces the Rashba constant by 50% [2], whereas an increase of the donor concentration by a factor of 20 enhances the constant by almost 50%. Both findings are explained in terms of a modified charge distribution close to the Pb nuclei [3] mediated by the metal-substrate interfaces. Especially the dependency of the Rashba constant on the substrate charge density opens the possibility to manipulate the Rashba effect through an external gate voltage and thus to realize a spin-based field effect transistor as proposed by Datta and Das [4].
[1] J.H. Dil, et al. Phys. Rev. Lett. 101, 266802 (2008)
[2] B. Slomski, et al. PRB 84, 193406 (2011)
[3] G. Bihlmayer, et al. Surf. Sci. 600, 3888 (2006)
[4] S. Datta, et al. Appl. Phys. Lett. 56, 7 (1990)