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O: Fachverband Oberflächenphysik
O 31: Clean surfaces II
O 31.8: Vortrag
Dienstag, 27. März 2012, 12:15–12:30, A 060
Preparation of vicinal Ge(100) surfaces in hydrogen ambient — •Oliver Supplie1, Sebastian Brückner1,2, Enrique Barrigón3, Henning Döscher1,2, Anja Dobrich1, Claas Löbbel1, Johannes Luczak1, Peter Kleinschmidt1,4, and Thomas Hannappel1,2,4 — 1Helmholtz-Zentrum Berlin, Institut Solare Brennstoffe und Energiespeichermaterialien, D-14109 Berlin — 2TU Ilmenau, Institut für Physik, Fachgebiet Photovoltaik, D-98693 Ilmenau — 3Instituto de Energía Solar, Universidad Politécnica de Madrid, E-28040 Madrid — 4CiS Forschungsinstitut für Mikrosensorik und Photovoltaik, D-99099 Erfurt
Vicinal Ge(100) is the established substrate for III-V nucleation regarding high efficiency opto-electronic devices such as multi-junction solar cells. We studied vicinal Ge(100) surfaces prepared by H2 annealing in metalorganic vapor phase epitaxy (MOVPE) environment prior to heteroepitaxy. A contamination-free MOVPE-to-UHV transfer system allowed to correlate in situ reflection anisotropy spectroscopy (RAS) and surface science techniques. Annealing in H2 removed oxides and carbon from the substrates as confirmed by X-ray photoemission spectroscopy. Low energy electron diffraction patterns indicated a (2× 1) majority surface reconstruction domain. The presence of coupled Ge-H monohydride was confirmed via Fourier-transform infrared spectroscopy. The RA spectrum of the hydrogen terminated Ge(100) surface featured characteristic differences compared to the RA spectrum of UHV-prepared clean Ge(100) in literature [1].
[1] Rossow et al., JVSTB18(2000)2229