Berlin 2012 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 34: Poster Session I (Graphene; Plasmonics and nanooptics; Coherence and coherent control in nanophotonics and plasmonics)
O 34.23: Poster
Dienstag, 27. März 2012, 18:15–21:45, Poster E
Raman spectrum of the (6√3×6√3)R30∘ reconstructed surface of 6H-SiC(0001) — •Felix Fromm1, Martin Hundhausen1, Myriano Henriques de Oliveira Jr.2, Marcelo Lopes2, Henning Riechert2, and Thomas Seyller1 — 1Universität Erlangen-Nürnberg, Lehrstuhl für Technische Physik, 91058 Erlangen — 2Paul-Drude-Institut für Festkörperelektronik, 10117 Berlin
The epitaxial growth of graphene on silicon carbide (SiC) by thermal sublimation of silicon in an argon atmosphere is a prominent method to produce high quality graphene layers. There are two approaches to obtain graphene on SiC: As an initial step of graphene formation a (6√3×6√3)R30∘ reconstructed overlayer of carbon, the so-called buffer layer (BL) is formed. Further graphitisation converts the BL to graphene and forms a new BL underneath (MLG). Another path is the conversion of the BL to graphene via intercalation of hydrogen. This results in quasi-free-standing graphene on hydrogen saturated SiC (QFMLG). In this work we analysed Raman spectra of QFMLG and MLG. Since graphene is highly transparent the substrate underneath the garphene contributes to the Raman spectrum. Therfore a SiC Raman spectrum has to be subtracted to obtain the Raman signal of the graphene layers. Whereas the Raman spectrum of QFMLG shows symmetric D and G lines, the spectrum of MLG shows additional broad features in the D and G range. We assign these broad contributions to the Raman spectrum of the BL.