Berlin 2012 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

O: Fachverband Oberflächenphysik

O 34: Poster Session I (Graphene; Plasmonics and nanooptics; Coherence and coherent control in nanophotonics and plasmonics)

O 34.2: Poster

Tuesday, March 27, 2012, 18:15–21:45, Poster E

Growth of epitaxial graphene on Rh(111) — •Karin Gotterbarm, Christian Papp, Oliver Höfert, Wei Zhao, and Hans-Peter Steinrück — Lehrstuhl für Physikalische Chemie II, Universität Erlangen-Nürnberg, Egerlandstr. 3, 91058 Erlangen

Epitaxial graphene was grown on a Rh(111) single crystal surface by chemical vapor deposition of propylene at elevated temperatures. The growth process was observed by fast XPS performed at the synchrotron facility BESSY II. The quality of the produced graphene sheets was checked by LEED. Different preparation parameters such as propylene pressure and preparation temperature were varied in order to investigate the influence of these parameters on corrugation and regularity of the produced graphene sheet. Additionally we explored the thermal stability of the produced graphene layers as well as the possibility to oxidise these layers. The lattice mismatch of graphene on the Rh(111) surface induces corrugation of the graphene sheet leading to two separated signals in the C 1s region.* The binding energy separation of the two species becomes more distinct at lower temperatures and varies depending on the preparation parameters mentioned above.

Support is acknowledged from the BMBF (05 ES3XBA/5) and the Cluster of Excellence "Engineering of Advanced Materials".

* A. B. Preobrajenski, May Ling Ng, A. S. Vinogradov, N. Mårtensson, Phys. Rev. B 78, 2008, 073401.